SiC growth on Si(111) from a C60 precursor:: a new experimental approach based on a hyperthermal supersonic beam

被引：7

作者：

Ciullo, G ^{[1
]}

Moratti, M ^{[1
]}

Toccoli, T ^{[1
]}

Iannotta, S ^{[1
]}

机构：

[1] CNR, Ist Trentino Cultura, Ctr Fis Stati Aggregati, I-38050 Povo, Italy

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 2000年 / 80卷 / 04期

关键词：

D O I：

10.1080/13642810008209771

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) films are grown on Si(111) using as a precursor fullerene seeded in helium supersonic beams. The regime of energy and flux distributions, achievable by changing the beam parameters, is well suited to synthesizing SiC films under well ordered conditions, because of better control of the synthesis process and of the C-60 dissociative absorption. This is confirmed by the first experimental results and by morphological and structural characterization of the films produced. Further developments are briefly discussed.

引用

页码：635 / 645

页数：11

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