Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm

被引：41

作者：

Müller, MI ^{[1
]}

Linder, N ^{[1
]}

Karnutsch, C ^{[1
]}

Schmid, W ^{[1
]}

Streubel, K ^{[1
]}

Luft, J ^{[1
]}

Beyertt, SS ^{[1
]}

Giesen, A ^{[1
]}

Döhler, GH ^{[1
]}

机构：

[1] Osram Opto Semicond, D-93049 Regensburg, Germany

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS VI | 2002年 / 4649卷

关键词：

thin-disk semiconductor laser with external-cavity; VECSEL; AlGaInP; external cavity laser; optically pumped semiconductor laser;

D O I：

10.1117/12.469242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optically pumped semiconductor thin-disk laser with external-cavity (OPS-TDL) is a new type of semiconductor laser structure with the capability of achieving high output power while retaining good beam quality. We demonstrate the first AlGaInP-based red light emitting OPS-TDL structure. The device has been pumped optically with an argon-laser at 514 nm. The device has an epitaxial backside mirror and a multiple quantum well active region, consisting of strained InGaP quantum wells arranged in several groups as a periodic gain structure. A peak single-mode output power of more than 200 mW at 660 nm has been obtained in pulsed operation. Various designs for the active layer have been investigated.

引用

页码：265 / 271

页数：7

共 7 条

[1] High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers [J].