Crystallization kinetics of amorphous silicon carbide derived from polymeric precursors

被引：18

作者：

Kurtenbach, D

Mitchell, BS

Zhang, HY

Ade, M

Müller, E

机构：

[1] Univ Min & Technol Freiberg, Inst Ceram Mat, D-09596 Freiberg, Germany

[2] Tulane Univ, Dept Chem Engn, New Orleans, LA 70118 USA

来源：

THERMOCHIMICA ACTA | 1999年 / 337卷 / 1-2期

关键词：

nucleation; crystallization; degradation; amorphous SiC; crystal size control;

D O I：

10.1016/S0040-6031(99)00230-0

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Phase separation processes like nucleation, crystallization and degradation of a polymer-derived amorphous silicon carbide precursor were quantified by means of thermoanalytical methods (DTA/TG). It is shown that the crystal size of the nanostructure could be controlled and limited by nuclei-inducing heat treatments. Furthermore, the justification for application of the JMAK theory was partially given. A comparison to amorphous SiC processed by other means (ion implanted) was drawn and reveals surprising similarities. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：155 / 161

页数：7

共 29 条

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ADE M, 1999, Z KRIST S, V16, P177

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