Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures

被引:33
作者
Biswas, Kanishka
Sardar, Kripasindhu
Rao, C. N. R. [1 ]
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res, DST Unit Nanosci, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India
[3] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
关键词
MOLECULAR-BEAM-EPITAXY; SEMICONDUCTORS; (GA; MN)N; ORIGIN; FILMS;
D O I
10.1063/1.2357927
中图分类号
O59 [应用物理学];
学科分类号
070305 [高分子化学与物理];
摘要
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics.
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页数:3
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