Modeling of current transport in hot filament CVD diamond films

被引：13

作者：

Girija, KG ^{[1
]}

Betty, CA ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Novel Mat & Struct Chem Div, Modular Labs, Bombay 400085, Maharashtra, India

来源：

关键词：

hot filament CVD; impedance spectroscopy; hopping conduction; interface states;

D O I：

10.1016/j.diamond.2004.04.009

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

The current transport mechanisms in undoped hot filament chemical vapor deposited (CVD) diamond films were investigated by employing impedance spectroscopy. An electrical model has been proposed to explain different conduction mechanisms. AC conductivity plots showed that there are at least two mechanisms involved in the carrier transport in polycrystalline diamond films. Hopping transport along the grain boundary path is the major component, while the interface states between the grain crystallites play a significant role in the low-frequency regime below 10 Hz. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：1812 / 1815

页数：4

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