Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells

被引：192

作者：

Fay, S. ^{[1
]}

Feitknecht, L. ^{[1
]}

Schluchter, R. ^{[1
]}

Kroll, U. ^{[1
]}

Vallat-Sauvain, E. ^{[1
]}

Shah, A. ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 18-19期

关键词：

TCO; LP-CVD; zinc oxide; thin-film silicon solar cells; light-scattering capacity;

D O I：

10.1016/j.solmat.2006.06.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Doped ZnO layers deposited by low-pressure chemical vapour deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. Surface roughness of these ZnO layers is related to their light-scattering capability; this is shown to be of prime importance to enhance the current generation in thin-film silicon solar cells. Surface roughness has been tuned over a large range of values, by varying thickness and/or doping concentration of the ZnO layers. A method is proposed to optimize the light-scattering capacity of ZnO layers, and the incorporation of these layers as front transparent conductive oxides for p-i-n thin-film microcrystalline silicon solar cells is studied. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2960 / 2967

页数：8

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