Electronic transport in disordered organic and inorganic semiconductors

被引:36
作者
Baranovskii, SD [1 ]
Zvyagin, IP
Cordes, H
Yamasaki, S
Thomas, P
机构
[1] Univ Marburg, Inst Chem Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
[4] AIST, JRCAT AIST, ASRC, Tsukuba, Ibaraki 3058562, Japan
[5] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[6] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1016/S0022-3093(01)00956-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It is shown that theoretical methods developed for a description of hopping transport in disordered inorganic solids can be also successfully applied to a description of hopping transport in organic disordered materials, such as conjugated polymers, molecularly doped polymers and organic glasses. While the density of localized states (DOS) in inorganic materials is believed to be exponential. a Gaussian DOS has been suggested for organic disordered materials. The most powerful and rigorous theoretical method for the description of variable-range hopping (VRH) in the exponential DOS is based on percolation theory. We show that this percolation approach is also valid for systems with a Gaussian DOS. thus being universal for inorganic and organic disordered materials. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:416 / 419
页数:4
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