The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition

被引:17
作者
Yang, GA
Gu, HS
Zhu, J
Wang, YQ
机构
[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Hubei Univ, Fac Phys & Elect Technol, Wuhan 430062, Peoples R China
[4] Huazhong Univ Sci & Technol, Natl Lab Laser Technol, Wuhan 430074, Peoples R China
关键词
crystal structure; X-ray diffraction; laser epitaxy; oxides; dielectric materials; ferroelectric materials;
D O I
10.1016/S0022-0248(02)01416-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The fabrication and characteristics of (Ba0.5Sr0.5)Ti-0.3 (BST) thin films prepared by sputtering (Ba0.5Sr0.5)TiO3 targets were investigated. The laser-deposited BST films were grown on Si (100) substrates at 700degreesC under an oxygen pressure of 0.1 Pa. The capacitance-voltage behavior of metal-insulator metal structures and their leakage current characteristics were studied. The results showed that the dielectric constant of 40 nm thick BST films was 150, and the dissipation factor was 0.035 at 1 MHz. The leakage current density was 2 x 10(-9) A/cm(2) at 2V. The high dielectric constant, low dielectric loss, and low leakage current show the potential of (Ba0.5Sr0.5)TiO3 thin films for integrated capacitors and high-density dynamic random access memories. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:172 / 176
页数:5
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