Experimental test for elastic compliance during growth on glass-bonded compliant substrates

Highly mismatched films (In0.44Ga0.56As, 3% mismatch) grown well beyond their critical thickness (to 3 mu m) on GaAs glass-bonded compliant substrates exhibit surfaces four times smoother and strain distributions twice as narrow as films grown simultaneously on conventional GaAs substrates. The compliant substrates consist of a thin (similar to 10 nm) GaAs template layer bonded via a borosilicate glass to a mechanical handle wafer. The improvement of highly mismatched films grown well beyond their critical thickness on compliant substrate structures is commonly modeled in terms of an elastic partitioning of strain from the film to the thin (similar to 10 nm) single-crystal template layer. The present study is a direct test for this mechanism of elastic compliance. A comparison is reported of the strain in 92 nm In0.09Ga0.91As films and 76 nm In0.03Ga0.97As films grown simultaneously on conventional GaAs substrates and the compliant substrates responsible for the improved structural quality of In0.44Ga0.56As films. Elastic partitioning of strain from the mismatched film to the 10 nm template layer prior to the onset of misfit dislocations is not observed for films grown on these glass-bonded compliant substrates. (C) 2000 American Institute of Physics. [S0003-6951(00)03318-0].