Electrical properties of highly (111)-oriented lead zirconate thin films

被引：26

作者：

Tang, XG ^{[1
]}

Wang, J

Wang, XX

Chan, HLW

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Ctr Mat Res, Kowloon, Hong Kong, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 06期

关键词：

thin films; ferroelectric; dielectric resonance;

D O I：

10.1016/j.ssc.2004.02.032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Antiferroelectric PbZrO3 thin films were grown oil Pt/Ti/SiO2/Si Substrates with predominant (111) orientation using a sol-gel process. The Pt/PbZrO3/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation (P-r) and coercive electric field (E-c) values of 8.97 muC/cm(2) and 162 kV/cm. respectively. The leakage current density of the highly (111)-oriented PbZrO3 film was less than 1.0 X 10(-7) A/cm(2) over electric field ranges from 0 to 105 kV/cm. The conduction current depended oil the voltage polarity. The PbZrO3/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour Of Pt/PbZrO3/Pt capacitor obeys the well-known Curie-Von Schweidler law at electric field of 20-80 kV/cm, file Currents have contributions of both dielectric relaxation Current and leak-age Current. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：373 / 377

页数：5

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