Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

被引：57

作者：

Ling, B. ^{[1
]}

Sun, X. W. ^{[1
,2
]}

Zhao, J. L. ^{[1
]}

Tan, S. T. ^{[2
]}

Dong, Z. L. ^{[3
]}

Yang, Y. ^{[1
]}

Yu, H. Y. ^{[1
]}

Qi, K. C. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 04期

关键词：

ZnO; Heterojunction; Light-emitting diode; UV emission; THIN-FILMS; ELECTRONIC-STRUCTURE; ROOM-TEMPERATURE; NANOROD ARRAYS; FABRICATION; EMISSION; P-SRCU2O2; CRYSTALS; CUALO2;

D O I：

10.1016/j.physe.2008.10.017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p(+)-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current-voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at +/- 7 V. Strong ultraviolet electro-luminescence centered at similar to 390 nm and a broad green-band emission were observed from the diode at room-tempera tu re. The p-CuAlO2 layer was found to facilitate hole injection from p(+)-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：635 / 639

页数：5

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