Analysis of transport properties of beta-SiC films: determination of donor density and compensation ratio

In this paper we present an interpretation of the electrical behavior of n-type beta-silicon carbide films deposited on silicon. The Hall effect and mobility behaviors were consistertly analysed as a function of temperature in order to determine the donor concentration, the compensation ratio and the ionization energy of impurities in the SiC films. The model takes into account the parallel conduction at the interface and the role of the substrate. The role of the compensation ratio on the electrical properties is clearly demonstrated - for the more weakly doped sample, we found a value of E-D which compares well to the one determined by optical spectroscopy. (C) 1997 Elsevier Science S.A.