A MODEL OF CONDUCTION IN INHOMOGENEOUS DEGENERATE SEMICONDUCTORS - APPLICATION TO SILICON-ON-SAPPHIRE FILMS

被引：12

作者：

ROBERT, JL

DUSSEAU, JM

GIRARD, P

SICART, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1903 / 1908

页数：6

共 11 条

[1] HIGH-FIELD ELECTRON-TRANSPORT IN SILICON-ON-SAPPHIRE LAYERS [J].

COOK, RK ;

FREY, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2656-2658

[2]

CRISTOLOVEANU S, 1980, REV PHYS APPL, V15, P225

[3]

DUSSEAU JM, 1981, RECENT DEV CONDENSED, V2, P295

[4]

DUSSEAU JM, 1980, THESIS U MONTPELLIER

[5] IMPURITY SCATTERING OF ELECTRONS IN NON-DEGENERATE SEMICONDUCTORS [J].

ELGHANEM, HMA ;

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10) :2041-2054

[6]

FRITZSCHE H, 1978, 19TH P SCOTT U SUMM, P193

[7]

GHIBAUDO G, 1980, 8TH P INT VAC C CA S, P459

[8]

Long D., 1980, Hall effect and its applications. Proceedings of the commemorative symposium, P339

[9] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

[10] CONDUCTION MECHANISMS IN AMORPHOUS AND DISORDERED SEMICONDUCTORS EXPLAINED BY A MODEL OF MEDIUM-RANGE DISORDER OF COMPOSITION [J].

PISTOULET, B ;

ROBERT, JL ;

DUSSEAU, JM ;

ENSUQUE, L .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 29 (01) :29-40

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