Evolution of the electronic structure with size in II-VI semiconductor nanocrystals

被引:296
作者
Sapra, S [1 ]
Sarma, DD
机构
[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore, Karnataka, India
[3] IISc, Ctr Condensed Matter Theory, Bangalore, Karnataka, India
关键词
D O I
10.1103/PhysRevB.69.125304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to provide a quantitatively accurate description of the band-gap variation with sizes in various II-VI semiconductor nanocrystals, we make use of the recently reported tight-binding parametrization of the corresponding bulk systems. Using the same tight-binding scheme and parameters, we calculate the electronic structure of II-VI nanocrystals in real space with sizes ranging between 5 and 80 Angstrom in diameter. A comparison. with available. experimental results from the literature shows an excellent agreement over the entire range of sizes.
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页数:7
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