Chemical solution deposition of thin TiO2-anatase films for dielectric applications

Thin films of TiO2 have been prepared using chemical solution deposition on 6" n-type Si(100) wafers. Thin film thickness in the range from 70 to 210 nm could be achieved via control of the number of deposition sequences. The final annealing temperature of 700degreesC resulted in an anatase phase structure with fine elongated grains and smooth surface topography. The capacity of the thin films is shown to depend on thickness, and could be interpreted assuming a series capacity with an SiO2 interfacial layer. The resulting dielectric constant of the TiO2 thin film has been calculated to be 23. The leakage current behavior and the break-down field also depend on film thickness. It is shown that thinner films are higher break-down fields. (C) 2004 Kluwer Academic Publishers.