Effects of oxygen plasma condition on MBE growth of ZnO

被引:56
作者
Sakurai, K [1 ]
Kanehiro, M
Nakahara, K
Tanabe, T
Fujita, S
Fujita, S
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[2] Rohm Co Ltd, Opt Device Res & Dev Div, Kyoto 6158585, Japan
关键词
growth direction; ZnO; MBE; bulk ZnO; photoluminescence;
D O I
10.1016/S0022-0248(99)00610-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report growth condition optimizations of ZnO films by plasma-assisted molecular beam epitaxy. Effects of oxygen plasma conditions on film quality were evaluated by photoluminescence, X-ray characterization and scanning electron microscopy. From the growth experiments on c-plane sapphire and bulk ZnO ( + c, - c) substrates, it was suggested that the surface morphology is strongly related with the growth direction of ZnO parallel to its c-axis, and was found to be controllable by optimization of oxygen plasma conditions. (C) 2000 Elsevier Science B,V. All rights reserved.
引用
收藏
页码:522 / 525
页数:4
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