Leveling and rebuilding:: An approach to improve the uniformity of (In,Ga)As quantum dots

被引：16

作者：

Gong, Q ^{[1
]}

Nötzel, R ^{[1
]}

Hamhuis, GJ ^{[1
]}

Eijkemans, TJ ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1506780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an approach to improve the uniformity of a single layer of (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept of our approach is to level and rebuild the (In,Ga)As QDs during insertion of a short period GaAs/InAs superlattice between the (In,Ga)As QD layer and the GaAs capping layer. For optimized layer thickness and number of superlattice periods this process results in uniform (In,Ga)As QDs with narrow photoluminescence line width of 20 meV at 4.5 K. (C) 2002 American Institute of Physics.

引用

页码：1887 / 1889

页数：3

共 10 条

[1] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[2] Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots [J].

Joyce, PB ;

Krzyzewski, TJ ;

Bell, GR ;

Jones, TS .

APPLIED PHYSICS LETTERS, 2001, 79 (22) :3615-3617

[3] Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots [J].

Joyce, PB ;

Krzyzewski, TJ ;

Steans, PH ;

Bell, GR ;

Neave, JH ;

Jones, TS .

SURFACE SCIENCE, 2001, 492 (03) :345-353

[4] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[5] Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution [J].

Mukhametzhanov, I ;

Wei, Z ;

Heitz, R ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1999, 75 (01) :85-87

[6] Independent manipulation of density and size of stress-driven self-assembled quantum dots [J].

Mukhametzhanov, I ;

Heitz, R ;

Zeng, J ;

Chen, P ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1998, 73 (13) :1841-1943

[7] Vertically aligned and electronically coupled growth induced InAs islands in GaAs [J].

Solomon, GS ;

Trezza, JA ;

Marshall, AF ;

Harris, JS .

PHYSICAL REVIEW LETTERS, 1996, 76 (06) :952-955

[8] Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures [J].

Sugiyama, Y ;

Nakata, Y ;

Futatsugi, T ;

Sugawara, M ;

Awano, Y ;

Yokoyama, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2A) :L158-L161

[9] Self-organization in growth of quantum dot superlattices [J].

Tersoff, J ;

Teichert, C ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 1996, 76 (10) :1675-1678

[10] VERTICALLY SELF-ORGANIZED INAS QUANTUM BOX ISLANDS ON GAAS(100) [J].

XIE, QH ;

MADHUKAR, A ;

CHEN, P ;

KOBAYASHI, NP .

PHYSICAL REVIEW LETTERS, 1995, 75 (13) :2542-2545

← 1 →