Deposition of low-resistivity ITO on plastic substrates by DC arc-discharge ion plating

被引：35

作者：

Niino, F ^{[1
]}

Hirasawa, H ^{[1
]}

Kondo, K ^{[1
]}

机构：

[1] Stanley Elect Co Ltd, R&D Lab, Aoba Ku, Yokohama, Kanagawa 2250014, Japan

来源：

THIN SOLID FILMS | 2002年 / 411卷 / 01期

关键词：

low-resistivity; ITO; DC arc-discharge ion plating;

D O I：

10.1016/S0040-6090(02)00168-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-resistivity SnO2 doped In2O3 (ITO) transparent conductive films were successfully deposited on SiO2-coated plastic substrates using d.c. arc-discharge ion plating. A resistivity of 2.45 X 10(-4) Omega cm. was achieved at a substrate temperature of 100 degreesC. The films had a polycrystalline structure with a [111] preferred orientation and the strongest peak was at (222). The average grain size of the films was approximately 500 nm. The visible transparency of the films was approximately 80%, and no deformation of the substrate was observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：28 / 31

页数：4

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