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Nitrogenation of diamond by glow discharge plasma treatment

被引：3
作者：
Durrant, SF
Baranauskas, V
Peterlevitz, A
Li, BB
Tosin, MC
Rangel, EC
Wang, J
Castro, SG
de Moraes, MAB
机构：
[1] Univ Estadual Campinas, Dept Semicond, Inst Foton, Fac Elect & Comp Engn, BR-13083970 Campinas, SP, Brazil
[2] Univ Estadual Campinas, Dept Fis Aplicada, IFGW, BR-13083970 Campinas, SP, Brazil
来源：
THIN SOLID FILMS | 1999年 / 355卷
基金：
巴西圣保罗研究基金会;
关键词：
diamond; electrical properties; glow discharge plasma treatment; chemical vapor deposition; photoelectron spectroscopy;
D O I：
10.1016/S0040-6090(99)00491-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of nitrogen incorporation on the electrical properties of diamond is currently under intense study. In this work, diamond grown by hot filament chemical vapor deposition was exposed to a radiofrequency (40 MHz glow discharge of pure nitrogen for times of between 5 min and 1 h. The effect of this exposure on the chemical and elemental composition of the samples was assessed by Raman and X-ray photoelectron spectroscopy. Changes in the electrical resistance with increasing film nitrogenation and temperature were measured. The scope and limitations of this approach to nitrogenation are evaluated. (C) 1999 Elsevier Science S.A. All rights reserved.
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收藏
页码：184 / 188
页数：5
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