Prospects on Mn-doped ZnGeP2 for spintronics

被引：14

作者：

Krivosheeva, A. V.

Shaposhnikov, V. L.

Lyskouski, V. V.

Borisenko, V. E.

d'Avitaya, F. Arnaud

Lazzari, J. -L.

机构：

[1] Belarussian State Univ Informat & Radioelect, Minsk, BELARUS

[2] CNRS, UPR 7251, CRMCN, F-13288 Marseille 9, France

来源：

MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2006.08.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetic impurities in ternary semiconductors could spectacularly change its properties. To better understand the Mn effects, we have performed theoretical calculations of the atomic structure and electronic properties of Mn-doped ZnGeP2 chalcopyrite. The influence of the concentration and location of impurity atoms on magnetic properties is analysed. The possibilities of spintronic applications of the material are discussed.

引用

页码：1747 / 1749

页数：3

共 8 条

[1]

[Anonymous], WHAT IS WHAT NANOWOR

[2] Synthesis of new pure ferromagnetic semiconductors:: MnGeP2 and MnGeAs2 [J].

Cho, S ;

Choi, S ;

Cha, GB ;

Hong, SC ;

Kim, Y ;

Freeman, AJ ;

Ketterson, JB ;

Park, Y ;

Park, HM .

SOLID STATE COMMUNICATIONS, 2004, 129 (09) :609-613

[3] Electronic and magnetic properties of MnSnAS2 [J].

Cho, SG ;

Choi, SY ;

Cha, GB ;

Hong, SC ;

Park, Y ;

Park, HM ;

Kim, Y ;

Ketterson, JB .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 241 (07) :1462-1465

[4] Room-temperature ferromagnetism in (Zn1-xMnx)GeP2 semiconductors -: art. no. 257203 [J].

Cho, SL ;

Choi, SY ;

Cha, GB ;

Hong, SC ;

Kim, Y ;

Zhao, YJ ;

Freeman, AJ ;

Ketterson, JB ;

Kim, BJ ;

Kim, YC ;

Choi, BC .

PHYSICAL REVIEW LETTERS, 2002, 88 (25) :4-257203

[5]

DEMIN R, 2004, PHYS STAT SOL C, V1, P3525

[6] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186

[7] New magnetic materials in ZnGeP2-Mn chalcopyrite system [J].

Medvedkin, GA ;

Hirose, K ;

Ishibashi, T ;

Nishi, T ;

Voevodin, VG ;

Sato, K .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (04) :609-612

[8] Possible impurity-induced ferromagnetism in II-Ge-V2 chalcopyrite semiconductors -: art. no. 094415 [J].

Zhao, YJ ;

Picozzi, S ;

Continenza, A ;

Geng, WT ;

Freeman, AJ .

PHYSICAL REVIEW B, 2002, 65 (09) :1-6

← 1 →