Synthesis of new pure ferromagnetic semiconductors:: MnGeP2 and MnGeAs2

被引：49

作者：

Cho, S

Choi, S

Cha, GB

Hong, SC

Kim, Y

Freeman, AJ

Ketterson, JB

Park, Y

Park, HM

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[3] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305600, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 129卷 / 09期

基金：

美国国家科学基金会;

关键词：

Semiconductor compounds; Spin polarized transport in semiconductors;

D O I：

10.1016/j.ssc.2003.11.040

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06 eV, respectively. Both compounds exhibit room-temperature ferromagnetism with T-C similar to 320 and 340 K for MnGeP2, and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：609 / 613

页数：5

共 22 条

[1] Properties of dopants in ZnGePe2 CdGeAs2, AgGaS2 and AgGaSe2 [J].