Lateral scale down, of InGaAs/InAs composite-channel HEMTs with tungsten-based tiered ohmic structure for 2-S/mm gm and 500-GHz fT

被引：35

作者：

Matsuzaki, Hideaki ^{[1
]}

Maruyama, Takashi ^{[1
]}

Koasugi, Toshihiko ^{[1
]}

Takahashi, Hiroyuki ^{[1
]}

Tokumitsu, Masami ^{[1
]}

Enoki, Takatomo ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 03期

关键词：

composite channel; f(T); g(m); HEMT; InAs; InGaAs; InP; noise figure (NF);

D O I：

10.1109/TED.2006.890262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A laterally scaled-down ohmic structure and an InGaAs/InAs. composite channel improve the de and RF characteristics of InP-based HEMTs. We reduced the distance between the gate and ohmic metal to less than 100 nm and to form sub-100-nm-long gate simultaneously, and also introduced device passivation for future construction of subterahertz-band integrated circuits. A 50-nm-gate HEMT exhibiting extrinsic transconductance of 2.0 S/mm and extrinsic current gain cutoff frequency (f(T)) of 496 GHz was successfully fabricated, with this technology. This is the first report of a transistor with both 500-GHz-class f(T) and large current drivability.

引用

页码：378 / 384

页数：7

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