Gallium arsenide photodetectors for imaging in the far ultraviolet region

被引：29

作者：

Caria, M

Barberini, L

Cadeddu, S

Giannattasio, A

Rusani, A

Sesselego, A

Lai, A

D'Auria, S

Dubecky, F

机构：

[1] Univ Cagliari, Dipartimento Fis, I-09042 Cagliari, Italy

[2] Ist Nazl Fis Nucl, Sez Cagliari, I-09042 Cagliari, Italy

[3] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[4] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.1497996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The aim of the present work is to systematically investigate the response and stability of commercial GaAs devices in the 200-400 nm UV range with a view to establishing their potentiality in imaging devices. The irradiation results of GaAs detectors with various geometries are presented and discussed. The detectors were reverse biased in fully depleted condition and in partially depleted condition (5 V reverse bias) in order to investigate the possibilities of integration with the standard bias values of read-out-integrated circuits. The results show that fabrication technology for nondedicated devices is still immature. (C) 2002 American Institute of Physics.

引用

页码：1506 / 1508

页数：3

共 7 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].