Nanostructured (α-Fe2O3 Thin Films for Photoelectrochemical Hydrogen Generation

被引:316
作者
Tahir, Asif Ali [1 ]
Wijayantha, K. G. Upul [1 ]
Saremi-Yarahmadi, Sina [3 ]
Mazhar, Muhammad [2 ]
McKee, Vickie [1 ]
机构
[1] Univ Loughborough, Dept Chem, Loughborough LE11 3TU, Leics, England
[2] Quaid I Azam Univ, Dept Chem, Islamabad 45320, Pakistan
[3] Univ Loughborough, Dept Mat, Loughborough LE11 3TU, Leics, England
基金
英国工程与自然科学研究理事会;
关键词
CHEMICAL-VAPOR-DEPOSITION; ULTRASONIC SPRAY-PYROLYSIS; IRON-OXIDE FILMS; ALPHA-FE2O3; FILMS; XPS SPECTRA; ELECTRICAL-PROPERTIES; FREQUENCY-DEPENDENCE; SPIN FRUSTRATION; TUNGSTEN-OXIDE; FE3+ IONS;
D O I
10.1021/cm803510v
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
(alpha-Fe2O3 thin film photoelectrodes were fabricated by aerosol-assisted chemical vapor deposition (AACVD) using a new hexanuclear iron precursor [Fe-6(PhCOO)(10)(acae)(2)(O)(2)(OH)(2)].3C(7)H(8) (1) (where PhCOO = benzoate and acac = 2,4-pentariedionate). The precursor (1) designed for AACVD has a low decomposition temperature and sufficient solubility in organic solvents and was synthesized by simple chemical techniques in high yield. It was characterized by inching point, FT-1R, X-ray crystallography, and thermogravimetry (TGA), The TGA analysis proved that complex (1) undergoes facile thermal decomposition at 475 degrees C to give Iron oxide residue. In-house designed AACVD equipment was used to deposit highly crystalline thin films Of(alpha-Fe2O3 on fluorine-doped SnO2 coated glass Substrates at 475 degrees C in a single step. The material properties were characterized by XRD, XPS, and Raman spectroscopy, and the results confirmed that films were highly crystalline alpha-Fe2O3 and free from other phases of iron oxide. Further anlysis of XRD data of the thin films proved the formation of crystalline hematite with an average diameter of 35 nm. X-ray photoelectron spectroscopy (XPS) confirmed that Fe is present only ill (lie Fe 3 4 oxidation state. Scanning electron microscopy (SEM) showed that the needle-like particles having length in the range of 100 to 160 nm with a diameter of 30-50 rim are sintered together to form a compact structure Of the 80-nm-thick alpha-Fe2O3 A layer. Optical, electrical, and photoelectrochemical studies were conducted by UV-vis, electrochemical impedance spectroscopy, and steady-state current-voltage plots. The optical bandgap was estimated, and it is about 2.13 eV. The dollor density of the alpha-Fe2O3 was 2.914 X 10(23) m(-3), and the flatband potential is approximately -0.86 V vs V-Ag/AgCl. The Photoelectrochemical characteristics recorded under ANI 1.5 illumination indicated that the photocurrent density of 600 mu A cm(-2) at, 1.23 V vs RHE, which is among the highest reported for all undoped alpha-Fe2O3 photoelectrode to date.
引用
收藏
页码:3763 / 3772
页数:10
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