Feynman diagrams and Fano interference in light scattering from doped semiconductors

被引：16

作者：

Belitsky, VI

Cantarero, A

Cardona, M

TralleroGiner, C

Pavlov, ST

机构：

[1] UNIV HAVANA,DEPT THEORET PHYS,HAVANA,CUBA

[2] RUSSIAN ACAD SCI,PN LEBEDEV PHYS INST,MOSCOW 117924,RUSSIA

[3] UNIV VALENCIA,E-46100 BURJASSOT,VALENCIA,SPAIN

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 27期

关键词：

D O I：

10.1088/0953-8984/9/27/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a diagrammatic approach to the calculation of quantum interference contributions to the Raman light scattering efficiency of doped semiconductors. A three-band model within a parabolic approximation is used to account far the electronic and optical phonon Raman scatterings under the condition of resonance coupling of an optical phonon with an inter-valence-band electronic continuum. Diagram techniques allow us to compare the roles of various processes contributing to an asymmetrical scattering profile.

引用

收藏

页码：5965 / 5976

页数：12

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