THEORY OF INTERFERENCE BETWEEN ELECTRONIC AND PHONON RAMAN-SCATTERING

被引：19

作者：

BECHSTEDT, F ^{[1
]}

PEUKER, K ^{[1
]}

机构：

[1] HUMBOLDT UNIV,SEKT PHYS,BEREICH THEORET HALBLEITER PHYS,BERLIN,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 72卷 / 02期

关键词：

D O I：

10.1002/pssb.2220720235

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：743 / 752

页数：10

共 23 条

[1] THEORY OF INTER-VALENCE-BAND ELECTRONIC RAMAN-SCATTERING IN CUBIC SEMICONDUCTORS WITHOUT AND WITH AN EXTERNAL ELECTRIC-FIELD [J].

BECHSTEDT, F ;

ENDERLEIN, R ;

PEUKER, K .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :43-52

[2]

BESERMAN R, 1972, 11TH P INT C PHYS SE, P1181

[3] INTERBAND ELECTRONIC RAMAN SCATTERING IN SEMIMETALS AND SEMICONDUCTORS [J].

BURSTEIN, E ;

MILLS, DL ;

WALLIS, RF .

PHYSICAL REVIEW B, 1971, 4 (08) :2429-&

[4] SIGN OF RAMAN TENSOR OF DIAMOND AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

CARDONA, M ;

CERDEIRA, F ;

FJELDLY, TA .

PHYSICAL REVIEW B, 1974, 10 (08) :3433-3435

[5] INTERACTION BETWEEN ELECTRONIC AND VIBRONIC RAMAN-SCATTERING IN HEAVILY DOPED SILICON [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1973, 13 (03) :325-328

[6] RAMAN STUDY OF INTERACTION BETWEEN LOCALIZED VIBRATIONS AND ELECTRONIC EXCITATIONS IN BORON-DOPED SILICON [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

PHYSICAL REVIEW B, 1974, 9 (10) :4344-4350

[7] RESONANT RAMAN SCATTERING IN GERMANIUM [J].

CERDEIRA, F ;

CARDONA, M ;

DREYBRODT, W .

SOLID STATE COMMUNICATIONS, 1972, 10 (07) :591-+

[8]

CERDEIRA F, 1974, PHYS REV B, V8, P4734

[9] THEORY OF INTERBAND AND INTRABAND LIGHT-SCATTERING IN SEMICONDUCTORS IN AN EXTERNAL ELECTRIC-FIELD [J].

ENDERLEIN, R ;

PEUKER, K .

SURFACE SCIENCE, 1973, 37 (01) :139-144

[10] THEORY OF INTERBAND RESONANCE RAMAN-SCATTERING IN SMALL-GAP SEMICONDUCTORS [J].

ENDERLEIN, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 70 (01) :263-268

← 1 2 3 →