Factorial experimental design applied to DRIE for optimised process in power electronics applications requiring high-aspect ratio trenches

被引：11

作者：

Brunet, Magali ^{[1
]}

Dubreuil, Pascal ^{[1
]}

Mahfoz-Kotb, Hicham ^{[2
]}

Gouantes, Aline ^{[1
]}

Dorthe, Anne-Marie ^{[3
]}

机构：

[1] Univ Toulouse, LAAS CNRS, F-31077 Toulouse, France

[2] Univ Assiut, Dept Phys, Fac Sci, Assiut 71516, Egypt

[3] Univ Bordeaux, ISM, ENSCPB, F-33607 Pessac, France

来源：

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2009年 / 15卷 / 09期

关键词：

High-aspect ratio; DRIE; DoE; Power electronics;

D O I：

10.1007/s00542-009-0893-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reliable factorial experimental design was applied to DRIE for specifically producing high-aspect ratio trenches. These trenches are to be used in power electronics applications such as active devices: deep trench superjunction MOSFET (DT-SJMOSFET) and passive devices: 3D integrated capacitors. Analytical expressions of the silicon etch rate, the verticality of the profiles, the selectivity of the mask and the critical loss dimension were extracted versus the process parameters. The influence of oxygen in the passivation plasma step was observed and explained. Finally, the analytical expressions were applied to the devices objectives. A perfectly vertical trench 100-mu m deep was obtained for DT-SJMOSFET. Optimum conditions for reaching high-aspect ratio structures were determined in the case of high-density 3D capacitors.

引用

页码：1449 / 1457

页数：9

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