Nanolithography

被引：3

作者：

Ferry, DK

Khoury, M

Pivin, DP

Connolly, KM

Whidden, TK

Kozicki, MN

Allee, DR

机构：

[1] Department of Electrical Engineering, Arizona State University, Tempe

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 11期

关键词：

D O I：

10.1088/0268-1242/11/11S/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanolithography is the technology of fabricating sub-0.1 mu m structures for use in either electronic devices or novel experiments in physics. While this has predominantly been the province of electron-beam lithography, new approaches explore the use of scanning probe techniques. Here, we discuss the limitations of electron-beam lithography, the development of novel SiO2 resists, and some uses of scanning-probe lithography.

引用

页码：1552 / 1557

页数：6

共 39 条

[1] DIRECT NANOMETER SCALE PATTERNING OF SIO2 WITH ELECTRON-BEAM IRRADIATION THROUGH A SACRIFICIAL LAYER [J].