Lateral electric-field effects on excitonic photoemissions in InGaAs quantum disks

被引：27

作者：

Gotoh, H ^{[1
]}

Kamada, H ^{[1
]}

Ando, H ^{[1
]}

Temmyo, J ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric-field effects on excitons in zero-dimensional InGaAs quantum disks have been examined at low temperature. Photoluminescence from a single isolated disk was measured under the application of a lateral electric field by using the microphotoluminescence technique. A redshift of sharp excitonic luminescence and a decrease in its intensity under increasing electric field were observed. These were found to distinctively depend on the lateral extent of the disks: these were much more prominent in the larger disk. The exciton luminescence was found to be highly polarized along the direction of the field in the larger disk. (C) 2000 American Institute of Physics. [S0003-6951(00)00207-2].

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页码：867 / 869

页数：3

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