Deep donors in Cd1-xZnxTe:Cl

被引:22
作者
Thio, T [1 ]
Bennett, JW [1 ]
机构
[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 03期
关键词
D O I
10.1103/PhysRevB.54.1754
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Measurements of the persistent photoconductivity (PPC) and Hall effect in Cl-doped Cd1-xZnxTe indicate that the Cl donors form several distinct deep DX states, consistent with recent calculations. For x = 0.20 only one DX state is evident, with a deep binding energy E(d) = 0.22 eV; the PPC has a single annealing transition at T-a = 130 K. For x = 0.18 the PPC has two distinct transitions, at T-b = 100 K and T-a = 190 K. We propose a model in which the presence of a second metastable state DX' boosts T-a significantly. For x = 0.28 the DX' lies 0.23 eV below the conduction band, whereas the deepest binding energy is E(d) = 0.40 eV. The rapid increase of E(d) with x explains the difficult of obtaining n-type ZnTe using Cl dopants. Nevertheless, these materials are interesting because DX centers with large E(d) and high T-a are potentially useful in optoelectronic application.
引用
收藏
页码:1754 / 1758
页数:5
相关论文
共 20 条
[1]  
[Anonymous], 1990, METAL INSULATOR TRAN
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF P-DOPED AND AS-DOPED CD1-XMNXTE [J].
BECLA, P ;
KAISER, D ;
GILES, NC ;
LANSARI, Y ;
SCHETZINA, JF .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1352-1362
[3]  
BENNETT JW, 1995, J APPL PHYS, V78, P582
[4]   ZN1-YCDYSE1-XTEX QUATERNARY WIDE BAND-GAP ALLOYS - MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES [J].
BRASIL, MJSP ;
TAMARGO, MC ;
NAHORY, RE ;
GILCHRIST, HL ;
MARTIN, RJ .
APPLIED PHYSICS LETTERS, 1991, 59 (10) :1206-1208
[5]   PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE [J].
BURKEY, BC ;
KHOSLA, RP ;
FISCHER, JR ;
LOSEE, DL .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1095-1102
[6]   Doping puzzles in II-VI and III-V semiconductors [J].
Chadi, DJ ;
Park, CH .
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196-2 :285-292
[7]   DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (04) :534-537
[8]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[9]   D-(DONOR)-X-CENTER BEHAVIOR FOR HOLES IMPLIED FROM OBSERVATION OF METASTABLE ACCEPTOR STATES [J].
HAN, J ;
RINGLE, MD ;
FAN, Y ;
GUNSHOR, RL ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1994, 65 (25) :3230-3232
[10]   NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J].
ISELER, GW ;
KAFALAS, JA ;
STRAUSS, AJ ;
BUBE, RH ;
MACMILLAN, HF .
SOLID STATE COMMUNICATIONS, 1972, 10 (07) :619-+