Doping puzzles in II-VI and III-V semiconductors

被引：21

作者：

Chadi, DJ

Park, CH

机构：

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-2卷

关键词：

deep donor levels; deep acceptor levels; II-VI semiconductors; III-V semiconductors; self-compensation; DX centers; AX centers; persistent photoconductivity;

D O I：

10.4028/www.scientific.net/MSF.196-201.285

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The problems of n- and p-type doping in wide-band-gap II-VI semiconductors III-V semiconductors is examined. A first principles pseudopotential. approach is used to identify the most important self-compensation mechanisms. Two distinct classes of DX centers are predicted in halogen doped II-VT semiconductors. A new type of low energy lattice instability involving two broken bonds is proposed to be the most effective mechanism in N and Cl-doped II-VI compounds and in some chalcogen doped III-V alloys.

引用

页码：285 / 292

页数：8

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