HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

被引:83
作者
Smith, EPG [1 ]
Pham, LT
Venzor, GM
Norton, EM
Newton, MD
Goetz, PM
Randall, VK
Gallagher, AM
Pierce, GK
Patten, EA
Coussa, RA
Kosai, K
Radford, WA
Giegerich, LM
Edwards, JM
Johnson, SM
Baur, ST
Roth, JA
Nosho, B
De Lyon, TJ
Jensen, JE
Longshore, RE
机构
[1] Raytheon Vis Syst, Goleta, CA 93117 USA
[2] HRL Labs LLC, Malibu, CA 90265 USA
[3] Raytheon Missle Syst, Tucson, AZ 85706 USA
关键词
Dual-color; focal plane array (FPA); mid-wavelength infrared (MWIR); long-wavelength infrared (LWIR); molecular beam epitaxy (MBE);
D O I
10.1007/s11664-004-0039-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Raytheon Vision Systems (RVS, Goleta, CA) in collaboration with HRL Laboratories (Malibu, CA) is contributing to the maturation and manufacturing readiness of third-generation, dual-color, HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from the routine growth and fabrication of 256 X 256 30-mum unit-cell staring FPAs that provide dual-color detection in the mid-wavelength infrared (MWIR) and long wavelength infrared (LWIR) spectral regions. The FPAs configured for MWIR/MWTR, MWIR/LWIR, and LWIR/LWIR detection are used for target identification, signature recognition, and clutter rejection in a wide variety of space and ground-based applications. Optimized triple-layer heterojunction (TLHJ) device designs and molecular beam epitaxy (MBE) growth using in-situ controls has contributed to individual bands in all dual-color FPA configurations exhibiting high operability (>99%) and both performance and FPA functionality comparable to state-of-the-art, single-color technology. The measured spectral cross talk from out-of-band radiation for either band is also typically less than 10%. An FPA architecture based on a single-mesa, single-indium bump, and sequential-mode operation leverages current single-color processes in production while also providing compatibility with existing second-generation technologies.
引用
收藏
页码:509 / 516
页数:8
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