Effect of LaNiO3 top electrode on the resistance of Pb(Zr,Ti)O3 ferroelectric capacitor to hydrogen damage and fatigue

被引:20
作者
Kim, DC [1 ]
Lee, WJ [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 3A期
关键词
Pb(Zr; Ti)O-3; LaNiO3; hydrogen damage; hysteresis characteristics; fatigue;
D O I
10.1143/JJAP.41.1470
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization hysteresis characteristics of Pb(Zi,Ti)O-3 (PZT) capacitors with a Pt top electrode are degraded by annealing in a hydrogen-containing environment due to the catalytic effect of Pt. This degradation can be avoided by adopting an LaNiO3 (LNO) conductive film as a top electrode. The LNO film does not act as a catalyst for the dissociation of hydrogen molecules and it is also a good diffusion barrier to the hydrogen molecules. The resistance of the LNO film to hydrogen degradation is further enhanced by inserting a thin Pt layer between the LNO and PZT films due to the blocking ability of Pt against the out-diffusion of the Pb component from the PZT film. The polarization characteristics of LNO/Pt/PZT/Pt capacitors are well preserved after hydrogen annealing even at 400degreesC for 30 min. The use of the LNO film as a top electrode also has a significant effect on improving the fatigue property of PZT capacitors.
引用
收藏
页码:1470 / 1476
页数:7
相关论文
共 18 条
[1]  
ACREE WE, 1994, CRC HDB CHEM PHYSICS, P1995
[2]   Deoxidization of iridium oxide thin film [J].
Cha, SY ;
Lee, HC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (10A) :L1128-L1130
[3]   Hydrogen reduction properties of RuO2 electrodes [J].
Hiratani, M ;
Matsui, Y ;
Imagawa, K ;
Kimura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A) :L1275-L1277
[4]   Analytical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O3 on a Pt electrode [J].
Ikarashi, N .
APPLIED PHYSICS LETTERS, 1998, 73 (14) :1955-1957
[5]  
Kaga Y., 1999, Surface Science Spectra, V6, P68, DOI 10.1116/1.1247890
[6]  
KHAMANKER R, 1994, P 1994 INT EL DEV M, P337
[7]  
KIM DC, 1999, INTEGR FERROELECTR, V27, P297
[8]   Post-annealing effects on antireduction characteristics of IrO2/Pb(ZrxTi1-x)O3/Pt ferroelectric capacitors [J].
Kushida-Abdelghafer, K ;
Hiratani, M ;
Fujisaki, Y .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1069-1074
[9]   IrO2/Pb(Zr,Ti1-x)O-3(PZT)/Pt ferroelectric thin-film capacitors resistant to hydrogen-annealing damage [J].
KushidaAbdelghafar, K ;
Miki, H ;
Yano, F ;
Fujisaki, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8A) :L1032-L1034
[10]  
KWOK CK, 1992, MATER RES SOC S P, V243, P393