Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by dark-field spectroscopy

被引:16
作者
Schubert, M [1 ]
Rheinlander, B [1 ]
Franke, E [1 ]
Pietzonka, I [1 ]
Skriniarova, J [1 ]
Gottschalch, V [1 ]
机构
[1] UNIV LEIPZIG,FA CHEM & MINERAL,D-04103 LEIPZIG,GERMANY
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 24期
关键词
D O I
10.1103/PhysRevB.54.17616
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The order-dependent valence-band splitting and direct-gap reduction in spontaneously ordered indirect-gap AlInP2 are determined by dark-field spectroscopy at room temperature. Similar to direct-gap GaInP2 both parameters depend on the degree of long-range CuPtB-type order. We obtain the direct gap for disordered and the order induced changes of the spin-orbit splitting and the crystal-field splitting normalized to the direct-gap change for perfectly ordered AlInP2.
引用
收藏
页码:17616 / 17619
页数:4
相关论文
共 15 条
[11]   BAND-GAP REDUCTION AND VALENCE-BAND SPLITTING IN SPONTANEOUSLY ORDERED GAINP2 STUDIED BY DARK-FIELD SPECTROSCOPY [J].
SCHUBERT, M ;
RHEINLANDER, B ;
GOTTSCHALCH, V .
SOLID STATE COMMUNICATIONS, 1995, 95 (10) :723-727
[12]   DEPENDENCE OF THE OPTICAL-PROPERTIES OF SEMICONDUCTOR ALLOYS ON THE DEGREE OF LONG-RANGE ORDER [J].
WEI, SH ;
LAKS, DB ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1993, 62 (16) :1937-1939
[13]   BAND-GAP NARROWING IN ORDERED AND DISORDERED SEMICONDUCTOR ALLOYS [J].
WEI, SH ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :662-664
[14]   OPTICAL-PROPERTIES OF ZINCBLENDE SEMICONDUCTOR ALLOYS - EFFECTS OF EPITAXIAL STRAIN AND ATOMIC ORDERING [J].
WEI, SH ;
ZUNGER, A .
PHYSICAL REVIEW B, 1994, 49 (20) :14337-14351
[15]  
YU PY, 1995, FUNDAMENTALS SEMICON, P67