Preparation of a Si(111):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(111)

被引：16

作者：

Fritsche, R

Wisotzki, E

Thissen, A

Islam, ABMO

Klein, A

Jaegermann, W

Rudolph, R

Tonti, D

Pettenkofer, C

机构：

[1] TH Darmstadt, Surface Sci Div, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

[2] Hahn Meitner Inst Berlin GmbH, Solar Energy Res SE6, D-14109 Berlin, Germany

来源：

SURFACE SCIENCE | 2002年 / 515卷 / 2-3期

关键词：

photoelectron spectroscopy; low energy electron diffraction (LEED); silicon; epitaxy;

D O I：

10.1016/S0039-6028(02)01851-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A Ga-Se half-sheet van der Waals surface termination on Si(111) is prepared in a two step process involving selenization of a monolayer gallium on the surface. Substrate and film growth were investigated in situ by high-resolution synchrotron X-ray photoemission and low-energy electron diffraction. Due to repeated reorganizing of the Si surface atoms and etching of Ga by excess Se it is generally difficult to achieve a complete surface coverage by GaSe by this preparation procedure. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：296 / 304

页数：9

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