Ge deposition on Ag surfaces:: Dependence of the adsorption characteristics on the surface orientation

被引：11

作者：

Sawaya, S ^{[1
]}

Goniakowski, J ^{[1
]}

Tréglia, G ^{[1
]}

机构：

[1] CNRS, Ctr Rech Mecanismes Croissance Cristalline, F-13288 Marseille 9, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.61.8469

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the ab initio full-potential linear muffin-tin orbital approach we have studied the characteristics of Ge adsorption on three different Ag surfaces. We have analyzed the surface-orientation-dependent characteristics of the Ge adsorption, focusing our attention on comparison between adatom and substitutional adsorption. We find that whereas on the (111) surface substitutional adsorption is preferential, on the (100) and (110) ones the two adsorption modes have similar energetics. Analysis of the adsorption-induced modifications of the electronic structure of both the substrate and the adsorbate supports the thesis that at small coverage, Ge deposition on the Ag surfaces is to a large extent determined by laws characteristic for metal on metal adsorption.

引用

页码：8469 / 8474

页数：6

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