Realization of optically pumped second-order GaInN-distributed-feedback lasers

被引：28

作者：

Hofmann, R

Gauggel, HP

Griesinger, UA

Grabeldinger, H

Adler, F

Ernst, P

Bolay, H

Harle, V

Scholz, F

Schweizer, H

Pilkuhn, MH

机构：

[1] 4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature distributed-feedback (DFB) laser operation is demonstrated with emission wavelengths ranging from 389 to 399 nm. Second-order DFB gratings were defined by electron beam lithography and reactive ion etching in the top GaN barrier layer of a GaInN/GaN double heterostructure grown by metalorganic vapor phase epitaxy. Our data allow a precise determination of the effective refractive index n(eff)(lambda) over the whole emission range. n(eff)(lambda) is compared with previously published values for GaN and GaInN. (C) 1996 American Institute of Physics.

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页码：2068 / 2070

页数：3

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