Wet-chemical preparation and spectroscopic characterization of Si interfaces

被引:55
作者
Angermann, H
Henrion, W
Rebien, M
Röseler, A
机构
[1] Hahn Meitner Inst Berlin GmbH, Abt Siliziumphotovolta, D-12489 Berlin, Germany
[2] Inst Spektrochem & Angew Spektroskopie, D-12489 Berlin, Germany
关键词
silicon surfaces; wet-chemical cleaning; hydrogen-termination; native oxidation; spectroscopic ellipsometry; surface photovoltage;
D O I
10.1016/j.apsusc.2004.05.105
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The combination of fast, non-destructive, and surface-sensitive spectroscopic methods, surface photovoltage technique (SPV), spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE), and Fourier-transform infrared ellipsometry (FTIR SE) provide detailed information about the influence of surface microroughness and the hydrogen and oxide coverage on electronic properties of H-terminated and oxidized silicon interfaces during the wet-chemical preparation process. By systematic investigations of common and newly developed wet-chemical preparation methods, correlations were established between the preparation-induced surface morphology, the resulting interface charge, the density, and energetic distributions of interface states. It was shown that the efficiency of passivation on wet-chemically treated Si (1 1 1) and Si (1 0 0) interfaces and the stability of H-termination in clean-room atmosphere strongly depends on the remaining surface microroughness and initial interface state density. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:322 / 339
页数:18
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