共 65 条
[2]
EFFECT OF SC1 PROCESS ON SILICON SURFACE MICROROUGHNESS AND OXIDE BREAKDOWN CHARACTERISTICS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1995, 34 (2A)
:L153-L155
[6]
Effect of preparation-induced surface morphology on the stability of H-terminated Si(111) and Si(100) surfaces
[J].
ULTRA CLEAN PROCESSING OF SILICON SURFACES V,
2003, 92
:179-182
[8]
Electronic properties of wet-chemically prepared oxide layers
[J].
ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000,
2001, 76-77
:181-184
[9]
Wet-chemical passivation of Si(111)- and Si(100)-substrates
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
2000, 73 (1-3)
:178-183