Inter-face states of SiO2/Si(111) observed by an atomic force microscope

被引：10

作者：

Hasunuma, R

Nishioka, Y

Ando, A

Miki, K

机构：

[1] Texas Instruments Tsukuba R&D Ctr Ltd, Tsukuba, Ibaraki 3050841, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

SURFACE SCIENCE | 1999年 / 443卷 / 03期

关键词：

atomic force microscopy (AFM); semiconductor-insulator interfaces; silicon oxides;

D O I：

10.1016/S0039-6028(99)01023-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the distribution of tunneling current through ultrathin oxide films on Si(111) with an atomic force microscope having a conductive tip. We observed enhancement of the tunneling current at step edges for the oxide grown in dry O-2 at 600 degrees C, while the oxide grown in NHO3 showed only small contrast over the surface. With analysis of the current-voltage characteristics, the tunneling current enhancement could reflect the interface states at the step edges. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L1055 / L1058

页数：4

共 9 条

[1] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].