Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

被引：29

作者：

Fang, W ^{[1
]}

Xu, JY

Yamilov, A

Cao, H

Ma, Y

Ho, ST

Solomon, GS

机构：

[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

OPTICS LETTERS | 2002年 / 27卷 / 11期

关键词：

D O I：

10.1364/OL.27.000948

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10. (C) 2002 Optical Society of America.

引用

页码：948 / 950

页数：3

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