HBT power devices and circuits

被引：10

作者：

Bayraktaroglu, B

机构：

[1] Northrop Grumman Corporation, MS 3K13, Baltimore, MD 21203

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(97)00120-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The status of the power HBT technology is reviewed. The advances made in the electrical and thermal design of unit-cells are examined to identify the present and near future applications in microwave power amplifications. The current status of the technology is such that AlGaGs/GaAs HBTs have become suitable for most microwave and especially for commercial LiS-band frequency applications. The performance is not yet adequate for mm-wave applications, which may require alternative material technologies. (C) 1997 Elsevier Science Ltd.

引用

页码：1657 / 1665

页数：9

共 44 条

[1]

Adlerstein M. G., 1993, IEEE Microwave and Guided Wave Letters, V3, P145, DOI 10.1109/75.217209

[2]

ALI F, 1994, IEEE 1994 MICROWAVE AND MILLIMETER-WAVE MONOLITHIC CIRCUITS SYMPOSIUM - DIGEST OF PAPERS, P113

[3]

ALI F, 1995, IEEE MTT-S, P721, DOI 10.1109/MWSYM.1995.406006

[4] HIGH-EFFICIENCY KU-BAND HBT AMPLIFIER WITH 1W CW OUTPUT POWER [J].

BARTUSIAK, P ;

HENDERSON, T ;

KIM, T ;

KHATIBZADEH, A ;

BAYRAKTAROGLU, B .

ELECTRONICS LETTERS, 1991, 27 (23) :2189-2190

[5] VERY HIGH-POWER-DENSITY CW OPERATION OF GAAS/ALGAAS MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BAYRAKTAROGLU, B ;

BARRETTE, J ;

KEHIAS, L ;

HUANG, CI ;

FITCH, R ;

NEIDHARD, R ;

SCHERER, R .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) :493-495

[6]

Bayraktaroglu B., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P1057, DOI 10.1109/MWSYM.1989.38904

[7]

Bayraktaroglu B, 1996, IEEE MTT-S, P685, DOI 10.1109/MWSYM.1996.511032

[8]

BAYRAKTAROGLU B, 1987, IEEE T MICROW THEORY, P969

[9]

BAYRAKTAROGLU B, 1994, IEEE MICR MILL WAV M, P43

[10]

CHANG MF, 1996, CURRENT TRENDS HETER

← 1 2 3 4 5 →