HBT power devices and circuits

被引：10

作者：

Bayraktaroglu, B

机构：

[1] Northrop Grumman Corporation, MS 3K13, Baltimore, MD 21203

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(97)00120-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The status of the power HBT technology is reviewed. The advances made in the electrical and thermal design of unit-cells are examined to identify the present and near future applications in microwave power amplifications. The current status of the technology is such that AlGaGs/GaAs HBTs have become suitable for most microwave and especially for commercial LiS-band frequency applications. The performance is not yet adequate for mm-wave applications, which may require alternative material technologies. (C) 1997 Elsevier Science Ltd.

引用

页码：1657 / 1665

页数：9

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