Analysis of Ni on Si-wafer surfaces using synchrotron radiation excited total reflection X-ray fluorescence analysis

被引：44

作者：

Wobrauschek, P

Gorgl, R

Kregsamer, P

Streli, C

Pahlke, S

Fabry, L

Haller, M

Knochel, A

Radtke, M

机构：

[1] WACKER SILTRON AG,D-84479 BURGHAUSEN,GERMANY

[2] UNIV HAMBURG,INST ANORGAN & ANGEW CHEM,D-20146 HAMBURG,GERMANY

来源：

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY | 1997年 / 52卷 / 07期

关键词：

total reflection; X-ray fluorescence analysis; synchrotron radiation; wafer analysis;

D O I：

10.1016/S0584-8547(96)01674-6

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Total Reflection X-Ray Fluorescence Analysis excited with synchrotron radiation (SR-TXRF) monochromatized by a multilayer (ML) has been used for the analysis of Ni on Si-wafer surfaces. Intentionally contaminated wafers using droplet samples have been used to determine the detection limits. Two different kinds of the geometrical arrangement of sample and detector have been compared, one of them resulting in detection limits of 13 fg for Ni. Experiments have been performed at Hasylab, Beam L using a bending magnet radiation. (C) 1997 Elsevier Science B.V.

引用

收藏

页码：901 / 906

页数：6

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