Resist materials for proton micromachining

被引:60
作者
van Kan, JA
Sanchez, JL
Xu, B
Osipowicz, T
Watt, F
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117548, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
关键词
micromachining; nuclear microscope; high aspect ratio;
D O I
10.1016/S0168-583X(99)00392-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The production of high aspect ratio microstructures is a potential growth area. The combination of deep X-ray lithography with electroforming and micromolding (i.e. LIGA) is one of the main techniques used to produce 3D microstructures. The new technique of proton micromachining employs focused MeV protons in a direct write process which is complementary to LIGA, e.g. micromachining with 2 MeV protons results in microstructures with a height of 63 mu m and lateral sub-micrometer resolution in PMMA resist. The aim of this paper is to investigate the capabilities of proton micromachining as a lithographic technique. This involves the study of different types of resists. The dose distribution of high molecular weight PMMA is compared with three other types of resist: First the positive photo resist AZ P4620 will be discussed and then PMGI SF 23, which can be used as a deep UV, e-beam or X-ray resist. Finally SU-8, a new deep UV negative type of chemically amplified resist will be discussed. All these polymers are applied using the spin coating technique at thicknesses of between 1 and 36 mu m (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:179 / 184
页数:6
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