GaN/AlGaN p-channel inverted heterostructure JFET

被引：47

作者：

Shatalov, M ^{[1
]}

Simin, G ^{[1
]}

Zhang, JP ^{[1
]}

Adivarahan, V ^{[1
]}

Koudymov, A ^{[1
]}

Pachipulusu, R ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 08期

关键词：

AlGaN; GaN; heterostructure field-effect transistor (HFET); junction field-effect transistor (JFET);

D O I：

10.1109/LED.2002.801295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n(+)-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.

引用

页码：452 / 454

页数：3

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