Synthesis of Ti(DPM)(2)(OCH3)(2) and evaluation of the TiO2 films prepared by metal-organic chemical vapor deposition

被引:12
作者
Ando, F [1 ]
Shimizu, H [1 ]
Kobayashi, I [1 ]
Okada, M [1 ]
机构
[1] NIPPON SANSO CORP,TSUKUBA LABS,IBARAKI,OSAKA 30033,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 9B期
关键词
MOCVD; source materials; Ti(DPM)(2)(OCH3)(2); TiO2; film; step coverage;
D O I
10.1143/JJAP.36.5820
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly pure Ti(DPM)(2)(OCH3)(2) was synthesized by an exchange reaction of Ti(DPM)(2)(i-OC3H7)(2) With CH3OH. The Ti(DPM)(2)(OCH3)(2) is a white crystalline material with a melting point of 80.1 degrees C, having a high vapor pressure the source temperature of 90 degrees C, which enable its stable supply for a long time. At the aim deposition temperatures of PZT and BST (500 degrees C-650 degrees C), no gas phase nucleation reaction was observed. The order of the performance of the step coverage for several titanium source materials was Ti(DPM)(2)(OCH3)(2) > Ti(DPM)(2)(i-OC3H7)(2) > Ti(DPM)(2)Cl-2 > Ti(i-OC3H7)(4). In the case of Ti(DPM)(2)(OCH3)(2), the step coverage for the Si substrate with an aspect ratio of 1.0 was 80% under the TiO2 film deposition conditions of 650 degrees C and 1 Torr.
引用
收藏
页码:5820 / 5824
页数:5
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