Adsorption of group-V elements on III-V(110) surfaces

被引：83

作者：

Schmidt, WG ^{[1
]}

Bechstedt, F ^{[1
]}

Srivastava, GP ^{[1
]}

机构：

[1] UNIV EXETER, DEPT PHYS, SEMICOND PHYS GRP, EXETER EX4 4QL, DEVON, ENGLAND

来源：

SURFACE SCIENCE REPORTS | 1996年 / 25卷 / 5-7期

关键词：

chemisorption; gallium phosphide; gallium arsenide; indium phosphide; indium arsenide; adatoms; arsenic; antimony; Bismuth; density functional calculations; surface electronic phenomena; phonons; low index single crystal surfaces;

D O I：

10.1016/S0167-5729(96)00006-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Adsorption of group-V elements on III-V (110) surfaces has led to one of the most extensively investigated overlayer systems. Sb and Bi grow epitaxially on the (110) surfaces of several III-V semiconductors and show in general a (1 x 1) symmetry for one adsorbed monolayer. The resulting interfaces are atomically sharp and therefore suitable model systems for experimental and theoretical studies of the Schottky barrier formation. In this paper we discuss the present stage of understanding of group-V covered III-V (110) surfaces. We provide a review of experimental techniques and results, and theoretical approaches applied to these systems. In particular state-of-the-art calculations based on density-functional theory are used to develop a comprehensive picture of the atomic structure, electronic states, vibrational properties, and their accompanying chemical trends. Different stages of the interface formation, from submonolayer coverages to thick overlayers, are considered.

引用

页码：141 / 223

页数：83

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