Comparison between ultra-thin ZrO2 and ZrOxNy gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices

被引：23

作者：

Nieh, R ^{[1
]}

Krishnan, S ^{[1
]}

Cho, HJ ^{[1
]}

Kang, CS ^{[1
]}

Gopalan, S ^{[1
]}

Onishi, K ^{[1
]}

Choi, R ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO2 and nitrogen-incorporated ZrO2 (ZrOxNy) gate dielectrics (EOTsimilar to10.3Angstrom). ZrOxNy devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO2 devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrOxNy, with the poly process (EOTsimilar to19Angstrom), but high leakage and TEM analysis revealed interaction between the poly and ZrOxNy.

引用

页码：186 / 187

页数：2

共 4 条

[1]

CHO HJ, 2001, IEDM, P665

[2] High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation [J].

Choi, R ;

Kang, CS ;

Lee, BH ;

Onishi, K ;

Nieh, R ;

Gopalan, S ;

Dharmarajan, E ;

Lee, JC .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :15-16

[3]

Koyama M., 2001, IEDM, P459

[4] MOS devices with high quality ultra thin CVD ZrO2 Gate dielectrics and self-aligned TaN and TaN/poly-Si gate electrodes [J].

Lee, CH ;

Kim, YH ;

Luan, HF ;

Lee, SJ ;

Jeon, TS ;

Bai, WP ;

Kwong, DL .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :137-138

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