Conductance quantization and transport gaps in disordered graphene nanoribbons

被引：264

作者：

Mucciolo, E. R. ^{[1
]}

Castro Neto, A. H. ^{[2
]}

Lewenkopf, C. H. ^{[3
,4
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Boston Univ, Dept Phys, Boston, MA 02215 USA

[3] Univ Estado Rio de Janeiro, Dept Fis Teor, BR-20550900 Rio De Janeiro, Brazil

[4] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 07期

关键词：

Anderson model; ballistic transport; electric admittance; graphene; nanostructured materials; quantum interference phenomena; BALLISTIC-TRANSPORT;

D O I：

10.1103/PhysRevB.79.075407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to Anderson localization induced by edge scattering and find that even for weak edge roughness, conductance steps are suppressed and transport gaps are induced. These gaps are approximately inversely proportional to the nanoribbon width. On/off conductance ratios grow exponentially with the nanoribbon length. Our results impose severe limitations to the use of graphene in ballistic nanowires.

引用

页数：5

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