Magnetoresistance tensor of La0.8Sr0.2MnO3

被引：46

作者：

Bason, Y. ^{[1
]}

Hoffman, J. ^{[2
]}

Ahn, C. H. ^{[2
]}

Klein, L. ^{[1
]}

机构：

[1] Bar Ilan Univ, Dept Phys, Nanomagnetism Res Ctr, Inst Nanotechnol & Adv Mat, IL-52900 Ramat Gan, Israel

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 09期

关键词：

crystal symmetry; enhanced magnetoresistance; Hall effect; lanthanum compounds; magnetic epitaxial layers; strontium compounds; THIN-FILMS;

D O I：

10.1103/PhysRevB.79.092406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.

引用

页数：4

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